BSC009NE2LS5IATMA1 vs IQE012N03LM5CGSCATMA1 对比

详细并排对比 BSC009NE2LS5IATMA1 出自 Infineon 和 IQE012N03LM5CGSCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IQE012N03LM5CGSCATMA1 IQE012N03LM5CGSCATMA1 - 30V 1.15mΩ OptiMOS 5 MOSFET | Infineon

IQE012N03LM5CGSCATMA1 - 30V 1.15mΩ OptiMOS 5 MOSFET | Infineon

IQE012N03LM5CGSCATMA1 ✓ 量产中

规格对比

参数 BSC009NE2LS5IATMA1 IQE012N03LM5CGSCATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.02 $1.55
Manufacturer Part Number BSC009NE2LS5IATMA1 —
Manufacturer Infineon Technologies —
Technology OptiMOS™ 5 (25V/30V family) OptiMOS 5 (trench MOSFET)
晶体管类型 N-Channel MOSFET —
Configuration Single with built-in diode —
Drain-Source Voltage (V_DS) max 25 V —
Gate-Source Voltage (V_GS) max 20 V —
Gate-Threshold Voltage V_GS(th) typ 1.7 V (range 1.0-2.0 V) —
R_DS(on) max @ V_GS=10V 0.95 mΩ —
Continuous Drain Current (I_D) @ T_A=25°C 40 A —
Continuous Drain Current (I_D) @ T_C=25°C 217 A (pulsed, datasheet rating) —
Power Dissipation (P_D) @ T_A 2.5 W —
Power Dissipation (P_D) @ T_C 74 W —
Total Gate Charge (Q_G) typ 23 nC @ V_GS=0-4.5V —
Input Capacitance (C_iss) typ 3200 pF —
工作温度范围 -55°C to +150°C —
封装 PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-WHTFN-9-1 (PQFN 3.3 × 3.3 mm Source-Down dual-side cooled)
安装类型 Surface Mount Surface Mount
MSL 等级 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020, floor life unlimited)
Terminal Finish Matte Tin (e3 per JESD-609) —
Number of Terminals 8 —
RoHS 状态 Compliant Compliant
FET Type — N-Channel
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) @ Ta — 34 A
Continuous Drain Current (ID) @ Tc — 224 A
Maximum RDS(on) @ VGS=10V — 1.15 mΩ
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 107 W
Gate Threshold Voltage (VGS(th)) — 2 V (typ, per Merlin listing)
工作结温 — -55 °C to +175 °C
Lead-Free — Yes

数据手册与资源

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