BSC010N04LSATMA1 vs BSC019N04NSGATMA1 对比
详细并排对比 BSC010N04LSATMA1 出自 Infineon 和 BSC019N04NSGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC010N04LSATMA1 | BSC019N04NSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.52 | $0.58 |
| Transistor Polarity | N-Channel | — |
| Drain-Source Breakdown Voltage (VDS) | 40 V | — |
| Gate-Source Voltage (VGS) Max | +/- 20 V | — |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Continuous Drain Current (ID, Ta=25C) | 38 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Max @ VGS=10V | 1.0 mOhm | — |
| On-Resistance RDS(on) Test Condition | VGS = 10 V, ID = 50 A | — |
| Gate Threshold Voltage VGS(th) Typ | 2 V | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (Tc=25C) | 139 W | — |
| Power Dissipation (Ta=25C) | 2.5 W | — |
| 工作温度范围 | -55C to +150C | -55C to +150C |
| 封装 | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TDSON-8-1 (TDSON-8 FL) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 | — |
| RoHS / Halogen-Free | RoHS compliant, halogen-free | — |
| Technology | OptiMOS 5 | OptiMOS (trench) |
| Avalanche Rated | 100% avalanche tested | — |
| Manufacturer | Infineon Technologies | — |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TA=25C | — | 30 A |
| RDS(on) max at VGS=10V | — | 2.5 mΩ |
| RDS(on) typ at VGS=10V | — | 1.9 mΩ |
| Gate-Source Threshold (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Power Dissipation (PD) at TC=25C | — | 125 W |
| RoHS 状态 | — | Compliant |