BSC010N04LSATMA1 vs BSC020N03LSGATMA1 对比

详细并排对比 BSC010N04LSATMA1 出自 Infineon 和 BSC020N03LSGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC010N04LSATMA1 BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon

BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon

BSC010N04LSATMA1 ✓ 量产中

规格对比

参数 BSC010N04LSATMA1 BSC020N03LSGATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.52 $0.42
Transistor Polarity N-Channel —
Drain-Source Breakdown Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) Max +/- 20 V —
Continuous Drain Current (ID, Tc=25C) 100 A —
Continuous Drain Current (ID, Ta=25C) 38 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) Max @ VGS=10V 1.0 mOhm —
On-Resistance RDS(on) Test Condition VGS = 10 V, ID = 50 A —
Gate Threshold Voltage VGS(th) Typ 2 V —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissipation (Tc=25C) 139 W —
Power Dissipation (Ta=25C) 2.5 W —
工作温度范围 -55C to +150C -55 C to +150 C (junction)
封装 PG-TDSON-8 FL (SuperSO8 5x6) —
安装类型 Surface Mount Surface Mount
MSL 等级 1 1 (per JEDEC J-STD-020, per Infineon datasheet)
RoHS / Halogen-Free RoHS compliant, halogen-free —
Technology OptiMOS 5 —
Avalanche Rated 100% avalanche tested —
Manufacturer Infineon Technologies Infineon Technologies
Series — OptiMOS 3
FET Type — N-Channel
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta=25C — 28 A
Continuous Drain Current (ID) at Tc=25C — 100 A
Gate-Source Voltage (VGS) — +/-20 V
Gate Threshold Voltage (VGS(th)) — 1 V to 2.2 V (typical range, per datasheet)
On-State Resistance (RDS(on)) at VGS=10V — approximately 2.0 mOhm
Power Dissipation (PD) at Ta=25C — 2.5 W
Power Dissipation (PD) at Tc=25C — 96 W
封装 / 外壳 — PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm)
Packaging — Tape & Reel
RoHS 状态 — Compliant

数据手册与资源

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