BSC010NE2LSIATMA1 vs BSC094N06LS5ATMA1 对比
详细并排对比 BSC010NE2LSIATMA1 出自 Infineon 和 BSC094N06LS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC010NE2LSIATMA1 | BSC094N06LS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.92 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series / Family | OptiMOS 25V | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) at TA | 38 A | — |
| Continuous Drain Current (ID) at TC | 100 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 96 W | — |
| 封装 | PG-TDSON-8-7 (TDSON-8 EP) | PG-TDSON-8-6 (SuperSO8 5x6) |
| 安装类型 | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Technology | OptiMOS (Trench) | OptiMOS™ 5 (logic-level) |
| 工作温度范围 | -55C to +150C (TJ) | — |
| 引脚数量 | 8 | — |
| RoHS 状态 | Compliant | Compliant |
| Gate Drive | Logic-level compatible | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Rds(on) at 10V | [DATA_NEEDED: Rds(on) at VGS=10V] | — |
| Rds(on) at 4.5V | [DATA_NEEDED: Rds(on) at VGS=4.5V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Part Number | — | BSC094N06LS5ATMA1 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=25°C | — | 47 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | — | 9.4 mΩ |
| RDS(on) max at VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/range] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25°C | — | 36 W |
| 工作结温 | — | -55 °C to +150 °C |