BSC018N04LSGATMA1 vs IPG20N04S4L07ATMA1 对比
详细并排对比 BSC018N04LSGATMA1 出自 Infineon 和 IPG20N04S4L07ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC018N04LSGATMA1 | IPG20N04S4L07ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.52 | $1.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | OptiMOS™ T2 |
| FET Type | N-Channel | 2x N-Channel (Dual, Independent) |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-to-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) @ TC=25°C | 100 A | — |
| Continuous Drain Current (ID) @ TA=25°C | 30 A | — |
| Power Dissipation (PD) @ TC=25°C | 125 W | — |
| Power Dissipation (PD) @ TA=25°C | 2.5 W | — |
| RDS(on) Max @ VGS=10 V | 1.8 mΩ | — |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 4.5 V, 10 V | — |
| Gate Threshold Voltage (VGS(th)) Typ | [DATA_NEEDED: VGS(th) typical] | — |
| 工作温度范围 | -55°C to +150°C (TJ) | — |
| 封装 | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-4 (TDSON-8-4) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant (Pb-free plating) | — |
| Avalanche Tested | 100% (per datasheet) | 100% (per datasheet) |
| JEDEC Qualification | Yes (qualified per JEDEC for target applications) | — |
| Continuous Drain Current (ID) | — | 20 A |
| RDS(on) Max @ VGS=10V | — | 7.2 mΩ (typical) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge at VGS=10V] |
| Power Dissipation (PD) Max | — | 65 W |
| 工作结温 | — | -55°C to +175°C |
| Logic-Level Gate Drive | — | Yes (4.5V VGS fully enhanced) |
| MSL 等级 | — | MSL1 (per JEDEC J-STD-020, 260°C peak reflow) |
| AEC-Q101 Qualification | — | Qualified |
| RoHS / Lead-Free | — | RoHS compliant, lead-free terminations |