BSC020N03LSGATMA1 vs BSZ065N03LSATMA1 对比
详细并排对比 BSC020N03LSGATMA1 出自 Infineon 和 BSZ065N03LSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
BSC020N03LSGATMA1 ✓ 量产中规格对比
| 参数 | BSC020N03LSGATMA1 | BSZ065N03LSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.42 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | OptiMOS 30V |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 28 A | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.2 V (typical range, per datasheet) | — |
| On-State Resistance (RDS(on)) at VGS=10V | approximately 2.0 mOhm | — |
| Power Dissipation (PD) at Ta=25C | 2.5 W | — |
| Power Dissipation (PD) at Tc=25C | 96 W | — |
| 工作温度范围 | -55 C to +150 C (junction) | -55C to +150C (junction) |
| 封装 / 外壳 | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) | PG-TSDSON-8-FL (S308) |
| 安装类型 | Surface Mount | Surface Mount |
| Packaging | Tape & Reel | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 (per JEDEC J-STD-020, per Infineon datasheet) | 1 |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25C | — | 12 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| Power Dissipation (PD) at TA=25C | — | 2.1 W |
| Power Dissipation (PD) at TC=25C | — | 26 W |
| Configuration | — | Single N-Channel |
| Technology | — | Trench MOSFET (OptiMOS) |
| Gate Drive (typical) | — | 4.5 V |