BSC023N08NS5SCATMA1 vs BSZ130N03LSGATMA1 对比
详细并排对比 BSC023N08NS5SCATMA1 出自 Infineon 和 BSZ130N03LSGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSC023N08NS5SCATMA1 - 80V, 2.3mΩ OptiMOS 5 Power MOSFET | Infineon
BSC023N08NS5SCATMA1 ✓ 量产中规格对比
| 参数 | BSC023N08NS5SCATMA1 | BSZ130N03LSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.05 | $0.41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC023N08NS5SCATMA1 | — |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 202 A | — |
| Power Dissipation (PD, Tc=25°C) | 188 W | — |
| On-State Resistance RDS(on) typ. | 2.3 mΩ at VGS=10 V, ID=50 A | — |
| Gate Threshold Voltage VGS(th) typ. | 3.8 V | — |
| Total Gate Charge Qg | 98 nC at VGS=10 V | — |
| Input Capacitance Ciss | 6.8 nF | — |
| Output Capacitance Coss | 74 pF | — |
| Thermal Resistance RthJC | 0.72 K/W | — |
| 工作结温 | -55 °C to +175 °C | — |
| 封装 | PG-WSON-8-2 (SuperSO8 DSC) | PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| Part Family | — | OptiMOS 25V / 30V |
| Polarity / Channel Type | — | N-Channel Enhancement Mode |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (Ta=25 C) | — | 10 A |
| 连续漏极电流（TC=25°C） | — | 35 A |
| On-State Resistance Rds(on) max @ Vgs=10V | — | 13 mOhm |
| Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA | — | 2.2 V |
| Power Dissipation (Ta) | — | 2.1 W |
| Power Dissipation (Tc) | — | 25 W |
| 工作温度范围 | — | -55 C to +150 C (junction) |
| MSL 等级 | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |
| 无卤 | — | Yes |
| Qualification | — | Industrial / Commercial (non-automotive) |