BSC026N04LSATMA1 vs BSC050N04LSGATMA1 对比
详细并排对比 BSC026N04LSATMA1 出自 Infineon 和 BSC050N04LSGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC026N04LSATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.78 | $0.41 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS™ 5 N-Channel Power MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID, Ta) | 23 A | — |
| Continuous Drain Current (ID, Tc=25°C) | 100 A | — |
| Pulsed Drain Current (IDM, Tc=25°C) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 2.6 mΩ | — |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: max RDS(on)] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: VGS(th) typ/min/max] |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 63 W | — |
| 工作温度范围 | -55°C to +150°C | -55C to +150C |
| 封装 | PG-TDSON-8-6 (TDSON 5x6 mm) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | Trench-gate OptiMOS™ 5 | OptiMOS 3 (trench MOSFET) |
| Channel Type | N-Channel | — |
| RoHS 状态 | Compliant | Compliant |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current at 25C (ID, Ta) | — | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | — | 85 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 57 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Avalanche Energy Rated | — | Yes (single-pulse avalanche) |
| MSL 等级 | — | 1 |