BSC050N03LSGATMA1 vs BSC120N03LSGATMA1 对比
详细并排对比 BSC050N03LSGATMA1 出自 Infineon 和 BSC120N03LSGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC050N03LSGATMA1 | BSC120N03LSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.36 | $0.36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC050N03LSGATMA1 | — |
| Technology | OptiMOS 3 (N-channel trench MOSFET) | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at Tc | 80 A | — |
| Continuous Drain Current (ID) at Ta | 18 A | — |
| On-State Resistance (RDS(on)) Max at VGS=10V | 5 mOhm | — |
| Power Dissipation (PD) at Tc | 50 W | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typical value] |
| 封装 | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TDSON-8-5 (SuperSO-8, 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 C to +150 C | -55C to +150C (TJ) |
| Channel Type | N-Channel | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 | 1 (per JEDEC J-STD-020) |
| Product Family | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta=25C | — | 12 A |
| Continuous Drain Current (ID) at Tc=25C | — | 39 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| On-State Resistance RDS(on) at VGS=10V | — | 12 mOhm (typical) |
| On-State Resistance RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 28 W |