BSC050N04LSGATMA1 vs BSC0901NSIATMA1 对比
详细并排对比 BSC050N04LSGATMA1 出自 Infineon 和 BSC0901NSIATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC050N04LSGATMA1 | BSC0901NSIATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.41 | $0.38 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current at 25C (ID, Ta) | 18 A | — |
| Continuous Drain Current at 25C (ID, Tc) | 85 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 57 W | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Technology | OptiMOS 3 (trench MOSFET) | OptiMOS 25V N-Channel Power MOSFET |
| 封装 | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) | PG-TDSON-8-6 (5x6 mm with exposed pad) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +150C | -55 C to +150 C |
| Avalanche Energy Rated | Yes (single-pulse avalanche) | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 | 1 |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta=25C | — | 28 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| On-State Resistance (RDS(on)) at VGS=10V | — | 2.0 mOhm typical |
| Gate-Source Threshold Voltage (VGS(th)) | — | 2.2 V max |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge nC] |
| Power Dissipation (PD) at Ta=25C | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 69 W |
| 引脚数量 | — | 8 |
| 无卤 | — | Yes |