BSC059N04LS6ATMA1 vs BSC150N03LDGATMA1 对比

详细并排对比 BSC059N04LS6ATMA1 出自 Infineon 和 BSC150N03LDGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC059N04LS6ATMA1 BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon

BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon

BSC059N04LS6ATMA1 ✓ 量产中

规格对比

参数 BSC059N04LS6ATMA1 BSC150N03LDGATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.74 $0.46
Technology OptiMOS 6 (N-channel MOSFET) —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TA=25C 17 A —
Continuous Drain Current (ID) at TC=25C 49 A —
Pulsed Drain Current (ID,pulse) at TC=25C 59 A —
On-Resistance RDS(on) max 5.9 mOhm at VGS=10 V —
Total Power Dissipation at TA=25C 3 W —
Total Power Dissipation at TC=25C 38 W —
Gate-Source Voltage (VGS) max +/-20 V —
工作温度范围 -55C to +150C —
封装 PG-TDSON-8-6 (SuperSO8 5x6 mm) PG-TDSON-8-4 (5x6 mm)
安装类型 Surface Mount Surface Mount
Diode Continuous Forward Current (IS) 38 A at TC=25C —
Diode Pulse Current (IS,pulse) 236 A at TC=25C —
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Manufacturer — Infineon Technologies
Series — OptiMOS 3
Configuration — Dual N-Channel MOSFET Array (half-bridge)
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Id) @ TA=25C — 20 A
Continuous Drain Current (Id) @ TA=70C — [DATA_NEEDED: Id at TA=70C]
Pulsed Drain Current (Idm) — [DATA_NEEDED: Idm]
Gate-Source Voltage (Vgs) — ±20 V
Gate Threshold Voltage (Vgs(th)) — 1.0 V to 2.5 V
On-State Resistance (Rds(on)) @ Vgs=10V — [DATA_NEEDED: typical Rds(on) mOhm]
On-State Resistance (Rds(on)) @ Vgs=4.5V — [DATA_NEEDED: typical Rds(on) mOhm]
Total Gate Charge (Qg) — [DATA_NEEDED: typical Qg nC]
Gate-Drain Charge (Qgd) — [DATA_NEEDED: typical Qgd nC]
Output Charge (Qoss) — [DATA_NEEDED: typical Qoss nC]
Power Dissipation (Pd) — 26 W
工作结温 — -55C to +150C
MSL 等级 — 1
无卤 — Yes

数据手册与资源

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