BSC059N04LS6ATMA1 vs IAUCN04S7L019ATMA1 对比
详细并排对比 BSC059N04LS6ATMA1 出自 Infineon 和 IAUCN04S7L019ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC059N04LS6ATMA1 | IAUCN04S7L019ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.74 | $0.48 |
| Technology | OptiMOS 6 (N-channel MOSFET) | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TA=25C | 17 A | — |
| Continuous Drain Current (ID) at TC=25C | 49 A | — |
| Pulsed Drain Current (ID,pulse) at TC=25C | 59 A | — |
| On-Resistance RDS(on) max | 5.9 mOhm at VGS=10 V | — |
| Total Power Dissipation at TA=25C | 3 W | — |
| Total Power Dissipation at TC=25C | 38 W | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| 工作温度范围 | -55C to +150C | — |
| 封装 | PG-TDSON-8-6 (SuperSO8 5x6 mm) | PG-TDSON-8-33 |
| 安装类型 | Surface Mount | Surface Mount |
| Diode Continuous Forward Current (IS) | 38 A at TC=25C | — |
| Diode Pulse Current (IS,pulse) | 236 A at TC=25C | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS™ 7 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (V<sub>DS</sub>) | — | 40 V |
| Continuous Drain Current (I<sub>D</sub>) | — | 120 A |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V | — | 1.91 mΩ |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | [DATA_NEEDED: Vgs(th) typical/max value] |
| Gate Charge (Q<sub>g</sub>) | — | [DATA_NEEDED: Qg total/nominal value] |
| 工作温度 | — | -55°C to +175°C (junction) |
| Power Dissipation (P<sub>D</sub>) | — | [DATA_NEEDED: Pd max at 25C] |
| 热阻，结到环境 | — | [DATA_NEEDED: RthJA value] |
| Automotive Qualification | — | AEC-Q101 qualified |
| MSL 等级 | — | 1 |
| Packaging | — | Tape & Reel (13-inch reel) |
| Standard Pack Quantity | — | 5000 pieces |
| Ordering Code Suffix | — | ATMA1 (Tape & Reel 13") |