BSC060N10NS3GATMA1 vs BSC077N12NS3GATMA1 对比
详细并排对比 BSC060N10NS3GATMA1 出自 Infineon 和 BSC077N12NS3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC060N10NS3GATMA1 | BSC077N12NS3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.78 | $0.71 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 | OptiMOS 3 (120 V) |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 120 V |
| Continuous Drain Current (ID, Ta) | 14.9 A | — |
| Continuous Drain Current (ID, Tc) | 90 A | — |
| On-Resistance RDS(on) Max @ VGS=10V | 6 mOhm | — |
| Power Dissipation (PD, Tc=25C) | 125 W | — |
| Gate Threshold Voltage VGS(th) | 2.0 V to 3.5 V | — |
| 工作结温 | -55 C to +150 C | -55C to +150C |
| Technology | OptiMOS 3 (Trench MOSFET) | — |
| 封装 | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | [DATA_NEEDED: MSL rating] | 1 |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| 无卤 | [DATA_NEEDED: halogen status] | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg value] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss value] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS value] | — |
| 晶体管类型 | — | N-Channel MOSFET (enhancement-mode trench) |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Continuous Drain Current (ID) at Ta | — | 13.4 A |
| Continuous Drain Current (ID) at Tc | — | 98 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-State Resistance RDS(on) max @ VGS=10V | — | 7.7 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 2.5 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Power Dissipation (PD) at Tc | — | 139 W |
| 引脚数量 | — | 8 |
| Automotive Grade | — | Yes (per Infineon part number suffix / datasheet) |