BSC060N10NS3GATMA1 vs BSC117N08NS5ATMA1 对比
详细并排对比 BSC060N10NS3GATMA1 出自 Infineon 和 BSC117N08NS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC060N10NS3GATMA1 | BSC117N08NS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.78 | $0.46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Ta) | 14.9 A | — |
| Continuous Drain Current (ID, Tc) | 90 A | — |
| On-Resistance RDS(on) Max @ VGS=10V | 6 mOhm | — |
| Power Dissipation (PD, Tc=25C) | 125 W | — |
| Gate Threshold Voltage VGS(th) | 2.0 V to 3.5 V | — |
| 工作结温 | -55 C to +150 C | — |
| Technology | OptiMOS 3 (Trench MOSFET) | OptiMOS 5 |
| 封装 | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-7 (SuperSO8 5x6) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | [DATA_NEEDED: MSL rating] | 1 |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| 无卤 | [DATA_NEEDED: halogen status] | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg value] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss value] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS value] | — |
| Part Number | — | BSC117N08NS5ATMA1 |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) max | — | 49 A (Tc) |
| On-State Resistance (RDS(on)) max | — | 11.7 mOhm |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 50 W |
| 引脚数量 | — | 8 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| 工作温度范围 | — | -55 C to +150 C (typical MOSFET junction) |