BSC076N06NS3GATMA1 vs IAUC100N04S6L025ATMA1 对比
详细并排对比 BSC076N06NS3GATMA1 出自 Infineon 和 IAUC100N04S6L025ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC076N06NS3GATMA1 | IAUC100N04S6L025ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.65 | $0.62 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 3 | — |
| Technology | N-Channel Trench MOSFET | OptiMOS 6 40V trench MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 50 A | 100 A |
| On-Resistance RDS(on) max at VGS=10V | 7.6 mΩ | — |
| On-Resistance RDS(on) max at VGS=4.5V | 10.4 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 3.5 V | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | [DATA_NEEDED: Qg total] |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 69 W | — |
| 工作温度范围 | -55C to +150C | — |
| 封装 | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TDSON-8 (SuperSO8 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| RoHS Compliance | Compliant | — |
| 无卤 | Yes (per Infineon product page) | — |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| On-State Resistance RDS(on) max at VGS=10V | — | 2.5 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Power Dissipation (PD) at TC=25C | — | 62 W |
| 工作结温 | — | -55 C to +175 C |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS 状态 | — | Compliant |
| Lead-Free | — | Yes |