BSC084P03NS3GATMA1 vs BSC0902NSIATMA1 对比

详细并排对比 BSC084P03NS3GATMA1 出自 Infineon 和 BSC0902NSIATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC084P03NS3GATMA1 BSC084P03NS3GATMA1 - P-Ch 30V 78.6A OptiMOS P3 MOSFET | Infineon

BSC084P03NS3GATMA1 - P-Ch 30V 78.6A OptiMOS P3 MOSFET | Infineon

BSC084P03NS3GATMA1 ✓ 量产中

规格对比

参数 BSC084P03NS3GATMA1 BSC0902NSIATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.24 $0.32
Polarity / Channel Type P-Channel —
Drain-Source Voltage (VDS) -30 V —
Continuous Drain Current (Ta) 14.9 A —
Continuous Drain Current (Tc) 78.6 A —
Rds(on) max @ VGS = -10 V 6.1 mOhm —
Rds(on) max @ VGS = -2.5 V [DATA_NEEDED: Rds(on) at 2.5V] —
Gate Threshold Voltage (VGS(th) typ) -1.7 V —
Total Gate Charge (Qg) 58 nC @ VGS = -10 V —
Input Capacitance (Ciss) 3.19 nF —
Output Capacitance (Coss) 110 pF —
Reverse Transfer Capacitance (Crss) 1.52 nF —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 69 W —
工作温度范围 -55C to +150C -55C to +150C (junction)
封装 PG-TDSON-8-5 (SuperSO8 5x6) PG-TDSON-8-6 (TDSON-8)
安装类型 Surface Mount Surface Mount
Technology Family OptiMOS P3 —
RoHS 状态 Compliant Compliant
MSL 等级 1 (unlimited) [DATA_NEEDED: MSL rating]
Manufacturer — Infineon Technologies
Product Family — OptiMOS 30V
Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 30 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TA=25C — 23 A
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-State Resistance RDS(on) Max at VGS=10V — 2.8 mOhm
Gate Charge QG(0V..10V) — 24 nC
Output Charge QOSS — 17 nC
Power Dissipation (TA) — 2.5 W
Power Dissipation (TC) — 48 W
Built-in Diode — Yes (single with built-in diode)
Lead-Free — Yes
无卤 — Yes

数据手册与资源

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