BSC0921NDIATMA1 vs BSC0502NSIATMA1 对比

详细并排对比 BSC0921NDIATMA1 出自 Infineon 和 BSC0502NSIATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC0921NDIATMA1 BSC0921NDIATMA1 - Dual N-Ch 30V OptiMOS 25V MOSFET | Infineon

BSC0921NDIATMA1 - Dual N-Ch 30V OptiMOS 25V MOSFET | Infineon

BSC0921NDIATMA1 ✓ 量产中

规格对比

参数 BSC0921NDIATMA1 BSC0502NSIATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.68 $0.85
Manufacturer Infineon Technologies —
Technology OptiMOS 25V (N-channel) OptiMOS 5 (Trench MOSFET)
Configuration Dual N-Channel MOSFET Array —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) 17 A (per channel) —
Pulsed Drain Current (IDM) 31 A (per channel, package-limited) —
Total Power Dissipation (PD) 1 W —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] —
Gate Charge (Qg) Ultra-low (OptiMOS 25V family characteristic) —
Output Charge (Qoss) Ultra-low (OptiMOS 25V family characteristic) —
封装 PG-TISON-8 (8-pin, exposed pad) PG-TDSON-8 (SuperSO8 5x6)
安装类型 Surface Mount Surface Mount
工作温度 -55C to +150C (junction) —
RoHS 状态 Compliant Compliant
MSL 等级 1 (per Infineon OptiMOS family) —
Primary Application Synchronous buck converters, VRMs, POL regulators —
FET Type — N-Channel
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at TC — 100 A
Continuous Drain Current (ID) at TA — 26 A
RDS(on) Max at VGS=10V — 2.3 mOhm
Gate Charge QG (0V to 4.5V) Typ — 9.0 nC
Output Charge QOSS Typ — 13.5 nC
Power Dissipation at TA (Ta=25C) — 2.5 W
Power Dissipation at TC (Tc=25C) — 43 W
Gate Threshold Voltage VGS(th) Typ — [DATA_NEEDED: VGS(th) typical value]
工作温度范围 — -55C to +150C

数据手册与资源

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