BSC094N06LS5ATMA1 vs BSZ096N10LS5ATMA1 对比

详细并排对比 BSC094N06LS5ATMA1 出自 Infineon 和 BSZ096N10LS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 BSC094N06LS5ATMA1 BSZ096N10LS5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.38 $0.94
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC094N06LS5ATMA1 —
Technology OptiMOS™ 5 (logic-level) OptiMOS 5 trench MOSFET
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TC=25°C 47 A —
Continuous Drain Current (ID) at TC=100°C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
RDS(on) max at VGS=10 V 9.4 mΩ —
RDS(on) max at VGS=4.5 V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Power Dissipation (PD) at TC=25°C 36 W —
工作结温 -55 °C to +150 °C —
封装 PG-TDSON-8-6 (SuperSO8 5x6) PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant
MSL 等级 [DATA_NEEDED: MSL level] —
Product Family — OptiMOS 5
Polarity — N-Channel
Drain-Source Voltage (VDS max) — 100 V
Gate-Source Voltage (VGS max) — 20 V (typical)
Continuous Drain Current (ID, TC=25 °C) — 40 A
Maximum Silicon Drain Current (ID max) — 62 A
Pulse Drain Current (ID,pulse) — 160 A
On-Resistance RDS(on) max — 9.6 mΩ at VGS=10 V
Total Power Dissipation (Ptot, TC=25 °C) — 69 W
Gate Threshold Voltage VGS(th) — Logic-level (low single-volt range)
Diode Continuous Forward Current (IS) — 40 A (TC=25 °C)
Diode Forward Voltage (VSD) — 0.85 V typ, 1.2 V max at IF=20 A
工作温度范围 — -55 °C to +150 °C (junction)
Gate Drive — Logic-level compatible
ESD Protection — Yes (gate-integrated)
Packaging Code — ATMA1 (tape and reel)

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