BSC098N10NS5ATMA1 vs BSC070N10NS5ATMA1 对比
详细并排对比 BSC098N10NS5ATMA1 出自 Infineon 和 BSC070N10NS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC098N10NS5ATMA1 | BSC070N10NS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.55 | $0.68 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 5 (N-channel trench) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc=25C) | 60 A | — |
| Continuous Drain Current (ID, Ta) | [DATA_NEEDED: ID Ta-rated value] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max @ VGS=10V | 9.8 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max +/-] | 20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: typical Qg] |
| Power Dissipation (Tc=25C) | 69 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Diode Continuous Forward Current (IS) | 63 A (Tc=25C) | — |
| Diode Pulse Current (IS,pulse) | 240 A (Tc=25C) | — |
| Diode Forward Voltage (VSD) typ | 0.9 V (IF=30 A, Tj=25C) | — |
| Diode Forward Voltage (VSD) max | 1.1 V (IF=30 A, Tj=25C) | — |
| 工作温度范围 | [DATA_NEEDED: Tj min/max] | — |
| 封装 | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 | 1 (per JEDEC J-STD-020) |
| Shipping Packaging | Tape & Reel (T/R) | — |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 80 A |
| RDS(on) max @ VGS=10V | — | 7 mOhm |
| Power Dissition at TC=25C (Ptot) | — | 83 W |
| Power Dissipation at TA=25C | — | 2.5 W |
| 工作结温范围 | — | -55 C to +150 C |
| Lead-Free | — | Yes |
| Typical Application | — | Synchronous rectification in SMPS |