BSC098N10NS5ATMA1 vs BSC360N15NS3GATMA1 对比

详细并排对比 BSC098N10NS5ATMA1 出自 Infineon 和 BSC360N15NS3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 BSC098N10NS5ATMA1 BSC360N15NS3GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.55 $0.82
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 3 (N-Channel Trench MOSFET)
Drain-Source Voltage (VDS) 100 V 150 V
Continuous Drain Current (ID, Tc=25C) 60 A —
Continuous Drain Current (ID, Ta) [DATA_NEEDED: ID Ta-rated value] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max @ VGS=10V 9.8 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max +/-] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Power Dissipation (Tc=25C) 69 W —
Power Dissipation (Ta) 2.5 W —
Diode Continuous Forward Current (IS) 63 A (Tc=25C) —
Diode Pulse Current (IS,pulse) 240 A (Tc=25C) —
Diode Forward Voltage (VSD) typ 0.9 V (IF=30 A, Tj=25C) —
Diode Forward Voltage (VSD) max 1.1 V (IF=30 A, Tj=25C) —
工作温度范围 [DATA_NEEDED: Tj min/max] -55°C to +150°C (junction)
封装 PG-TDSON-8-7 (SuperSO8 5x6) PG-TDSON-8-1 (SuperSO8, 5x6 mm)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant
MSL 等级 1 1
Shipping Packaging Tape & Reel (T/R) —
Manufacturer — Infineon Technologies
Part Number — BSC360N15NS3GATMA1
Continuous Drain Current (ID) at Tc — 33 A
On-Resistance RDS(on) max at VGS=10V — 36 mOhm
Power Dissipation (PD) at Tc — 74 W
Gate Threshold Voltage (VGS th) typ — 3.0 V
Total Gate Charge (Qg) typ — [DATA_NEEDED: Qg value]
Avalanche Energy Rated — Yes
Lead-Free — Yes

数据手册与资源

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