BSC098N10NS5ATMA1 vs BSZ031NE2LS5ATMA1 对比

详细并排对比 BSC098N10NS5ATMA1 出自 Infineon 和 BSZ031NE2LS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSZ031NE2LS5ATMA1 BSZ031NE2LS5ATMA1 - 25V N-Ch 3.1mOhm OptiMOS 5 MOSFET | Infineon

BSZ031NE2LS5ATMA1 - 25V N-Ch 3.1mOhm OptiMOS 5 MOSFET | Infineon

BSZ031NE2LS5ATMA1 ✓ 量产中

规格对比

参数 BSC098N10NS5ATMA1 BSZ031NE2LS5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.55 $0.26
Technology OptiMOS 5 (N-channel trench MOSFET) —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, Tc=25C) 60 A —
Continuous Drain Current (ID, Ta) [DATA_NEEDED: ID Ta-rated value] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: IDM]
On-Resistance RDS(on) max @ VGS=10V 9.8 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max +/-] [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Power Dissipation (Tc=25C) 69 W —
Power Dissipation (Ta) 2.5 W —
Diode Continuous Forward Current (IS) 63 A (Tc=25C) —
Diode Pulse Current (IS,pulse) 240 A (Tc=25C) —
Diode Forward Voltage (VSD) typ 0.9 V (IF=30 A, Tj=25C) —
Diode Forward Voltage (VSD) max 1.1 V (IF=30 A, Tj=25C) —
工作温度范围 [DATA_NEEDED: Tj min/max] —
封装 PG-TDSON-8-7 (SuperSO8 5x6) PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant
MSL 等级 1 [DATA_NEEDED: MSL]
Shipping Packaging Tape & Reel (T/R) —
Manufacturer — Infineon Technologies
Part Number — BSZ031NE2LS5ATMA1
Technology / Platform — OptiMOS 5 25V/30V N-channel trench MOSFET
Drain-Source Voltage (VDS) max — 25 V
Continuous Drain Current (ID) at Ta=25C — 19 A
Continuous Drain Current (ID) at Tc=25C — 40 A
RDS(on) max @ VGS=10 V — 3.1 mOhm
RDS(on) typical @ VGS=4.5 V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Power Dissipation at Ta=25C — 2.1 W
Power Dissipation at Tc=25C — 30 W
工作结温 — -55 C to +150 C
Lead-Free — Yes
无卤 — Yes

数据手册与资源

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