BSC190N15NS3GATMA1 vs BSC12DN20NS3GATMA1 对比
详细并排对比 BSC190N15NS3GATMA1 出自 Infineon 和 BSC12DN20NS3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N15NS3GATMA1 ✓ 量产中Infineon
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 ✓ 量产中规格对比
| 参数 | BSC190N15NS3GATMA1 | BSC12DN20NS3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.98 | $0.61 |
| Technology | OptiMOS 3 (N-Channel) | OptiMOS power MOSFET |
| Drain-Source Voltage (VDS) | 150 V | 200 V |
| Continuous Drain Current (ID) at Tc=25C | 50 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V | [DATA_NEEDED: gate threshold typical] |
| On-Resistance RDS(on) max at VGS=10V | 19 mOhm | — |
| On-Resistance RDS(on) typ at VGS=10V | [DATA_NEEDED: RDS(on) typical at 10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at Tc=25C | 125 W | — |
| 工作温度范围 | -55 C to +150 C | [DATA_NEEDED: operating temperature range] |
| 封装 | PG-TDSON-8-1 (TDSON-8 EP) | PG-TDSON-8-5 |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 | 1 (per JEDEC J-STD-020) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 200V |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | — | 11.3 A |
| Power Dissipation (PD, Tc) | — | 50 W |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Configuration | — | Single N-channel |
| 引脚数量 | — | 8 |