BSD214SNH6327XTSA1 vs BSP135H6327XTSA1 对比
详细并排对比 BSD214SNH6327XTSA1 出自 Infineon 和 BSP135H6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSD214SNH6327XTSA1 | BSP135H6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.27 | $0.43 |
| FET Type | N-Channel | N-Channel, Depletion Mode |
| Technology | MOSFET (Metal Oxide), OptiMOS | SIPMOS (planar DMOS) |
| Drain-to-Source Voltage (Vdss) | 20 V | — |
| Continuous Drain Current (Id) at 25C | 1.5 A | — |
| Power Dissipation (Pd) at Ta | 500 mW | — |
| Gate Drive Voltage (Rds On rated) | 2.5 V, 4.5 V | — |
| Rds On (Max) @ Vgs=4.5V | [DATA_NEEDED: Rds On at Vgs=4.5V] | — |
| Rds On (Max) @ Vgs=2.5V | [DATA_NEEDED: Rds On at Vgs=2.5V] | — |
| Vgs(th) (typical) | [DATA_NEEDED: Vgs threshold typical] | — |
| 封装 | SOT-363 (PG-SOT363-PO), 6-pin | PG-SOT223-4 (SOT-223-3 plus tab) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +150C (junction) | -55C to +150C (junction, typical) |
| Automotive Qualification | AEC-Q101 qualified | — |
| Lead Plating | Pb-free | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 | 1 |
| Standard Pack Quantity | 3000 (Tape & Reel) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSP135H6327XTSA1 |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) | — | 120 mA |
| Power Dissipation (PD) | — | 1.8 W |
| On-Resistance RDS(on) max | — | 45 ohm at VGS = 0 V |
| On-Resistance RDS(on) | — | 25 ohm (typical, per digchip) |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Operating Mode | — | Normally ON (depletion) |