BSP135H6906XTSA1 vs BSP129H6906XTSA1 对比

详细并排对比 BSP135H6906XTSA1 出自 Infineon 和 BSP129H6906XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSP135H6906XTSA1 BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 ✓ 量产中
Infineon
BSP129H6906XTSA1 BSP129H6906XTSA1 - 240V N-Ch Depletion MOSFET | Infineon

BSP129H6906XTSA1 - 240V N-Ch Depletion MOSFET | Infineon

BSP129H6906XTSA1 ✓ 量产中

规格对比

参数 BSP135H6906XTSA1 BSP129H6906XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.78 $0.65
FET Type N-Channel Depletion Mode N-Channel, Depletion Mode
Drain-Source Voltage (VDS) Max 600 V —
Continuous Drain Current (ID) at TA=25C 120 mA 350 mA
RDS(on) Max at VGS=0V 45 Ohm —
Power Dissipation (PD) Max 1.8 W —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(off)) Depletion mode (normally-on) —
工作温度范围 -55C to +150C [DATA_NEEDED: TJ max]
封装 PG-SOT223-4 (SOT-223, 3+tab) PG-SOT223-4 (SOT-223)
安装类型 Surface Mount Surface Mount
引脚数量 4 (3 leads + drain tab) —
Technology SIPMOS (planar high-voltage) —
MSL 等级 1 (unlimited) 1 (unlimited floor life)
RoHS 状态 Compliant Compliant
Automotive Qualification AEC-Q101 (per datasheets.com parametric record) —
Lead-Free Yes —
Manufacturer — Infineon Technologies
Part Number — BSP129H6906XTSA1
Drain-Source Voltage (VDS) — 240 V
Power Dissipation (PD) at TA=25C — 1.8 W
Drain-Source On-Resistance (RDS(on)) — 6 Ohm (max)
Operating Mode — Normally-On (Depletion)
Gate-Source Pinch-Off Voltage — [DATA_NEEDED: VGS(off) typical value]
引脚数 — 3 functional + 1 tab (4 leads)
ESD Protection — Integrated Zener diodes on gate

数据手册与资源

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