BSP78HUMA1 vs BSP88H6327XTSA1 对比

详细并排对比 BSP78HUMA1 出自 Infineon 和 BSP88H6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSP88H6327XTSA1 BSP88H6327XTSA1 - 240V N-Ch MOSFET 350mA SOT-223 | Infineon

BSP88H6327XTSA1 - 240V N-Ch MOSFET 350mA SOT-223 | Infineon

BSP88H6327XTSA1 ✓ 量产中

规格对比

参数 BSP78HUMA1 BSP88H6327XTSA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.62 $0.21
Technology Smart SIPMOS (N-channel vertical power FET) SIPMOS (planar enhancement mode)
功能 Self-protected low-side power switch —
Operating Supply Voltage (Vbb) 4.5 V to 42 V —
Continuous Load Current Up to 3 A —
On-state Resistance (Rds(on)) 200 mΩ typical —
Input Logic Level Logic-level (3.3 V / 5 V compatible) —
Current Limitation Yes (internal) —
热关断 Yes (with auto-restart) —
Overvoltage Protection Yes (load-dump tolerant) —
Short-circuit Protection Yes —
Overload Protection Yes —
ESD Protection Yes (on input pin) —
Diagnostic Output Open-drain status flag —
工作结温 -40 °C to +150 °C —
封装 PG-SOT223-4 (TO-261-4) with exposed tab PG-SOT223-4 (SOT-223-3)
安装类型 Surface Mount Surface Mount
AEC-Q100 Qualification Qualified —
RoHS 状态 Compliant (Green product) —
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 240 V
Continuous Drain Current (ID) — 350 mA at Ta=25 C
Power Dissipation (PD) — 1.8 W at Ta=25 C
On-State Resistance (RDS(on)) — 6 ohm typical at VGS=10 V
Configuration — Single
工作温度 — -55 C to +150 C
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) min/typ/max]
Automotive Qualification — AEC-Q101 qualified
Lead Plating — Pb-free
RoHS Compliance — Compliant
MSL 等级 — [DATA_NEEDED: MSL level]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Drain Tab Connection — SOT-223 tab is drain

数据手册与资源

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