BSS138LT1G-VB vs BSS138NH6327XTSA2 对比
详细并排对比 BSS138LT1G-VB 出自 VBsemi Elec 和 BSS138NH6327XTSA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSS138LT1G-VB | BSS138NH6327XTSA2 |
|---|---|---|
| 品牌 | VBsemi Elec | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.02 | $0.15 |
| 晶体管类型 | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (Vdss) | 50 V | — |
| Continuous Drain Current (Id) | 200 mA (Ta) | — |
| Power Dissipation (Pd) | 225 mW (Ta) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 封装 | SOT-23-3 (TO-236) | PG-SOT-23 (3-pin) |
| Configuration | Single FET | — |
| Gate Threshold Voltage (Vgs th) | [DATA_NEEDED: gate threshold voltage] | — |
| RDS(on) Max | [DATA_NEEDED: RDS(on)] | — |
| Drive Voltage | [DATA_NEEDED: drive voltage] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | — |
| RoHS 状态 | Compliant | — |
| Manufacturer | VBsemi Elec | — |
| Equivalent To | onsemi BSS138LT1G | — |
| Polarity | — | N-Channel |
| Operating Mode | — | Enhancement |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 60 V |
| R_DS(on) max @ V_GS=10V | — | 3.5 ohm |
| Continuous Drain Current (Ta) | — | 230 mA |
| Power Dissipation (Ta) | — | 360 mW |
| Gate Threshold V_GS(th) | — | [DATA_NEEDED: typical V_GS(th) value] |
| 工作温度范围 | — | [DATA_NEEDED: Tj max and operating range] |
| Gate-Source Voltage V_GS max | — | ±20 V |
| dv/dt Rated | — | Yes |
| 无卤 | — | Yes (per IEC 61249-2-21) |
| RoHS Compliance | — | Compliant |
| AEC-Q101 Qualification | — | Qualified |
| Lead Plating | — | Pb-free |
| Marking Code | — | [DATA_NEEDED: top-side marking code] |
| Packaging | — | Tape and Reel |