BSS192PH6327FTSA1 vs BSP88H6327XTSA1 对比
详细并排对比 BSS192PH6327FTSA1 出自 Infineon 和 BSP88H6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSS192PH6327FTSA1 | BSP88H6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.34 | $0.21 |
| FET Type | P-Channel | — |
| Technology | MOSFET (Metal Oxide) | SIPMOS (planar enhancement mode) |
| Drain-to-Source Voltage (Vdss) | 250 V | — |
| Continuous Drain Current (Id) @ 25C | 190 mA (Ta) | — |
| Power Dissipation (Pd) | 1 W (Ta) | — |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8 V, 10 V | — |
| Rds On (Max) @ Id, Vgs | [DATA_NEEDED: Rds On max @ Vgs] | — |
| Vgs(th) (Max) | [DATA_NEEDED: gate threshold voltage max] | — |
| Vgs(th) (Typ) | [DATA_NEEDED: gate threshold voltage typ] | — |
| 封装 | PG-SOT89 (SOT-89-3, 4-pin 3+Tab) | PG-SOT223-4 (SOT-223-3) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | [DATA_NEEDED: Tj max / operating temp] | — |
| Automotive Qualification | AEC-Q101 (per distributor listing) | AEC-Q101 qualified |
| Series | SIPMOS Small-Signal-Transistor | — |
| Part Status | Active | — |
| RoHS 状态 | [DATA_NEEDED: explicit RoHS status from datasheet] | — |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 240 V |
| Continuous Drain Current (ID) | — | 350 mA at Ta=25 C |
| Power Dissipation (PD) | — | 1.8 W at Ta=25 C |
| On-State Resistance (RDS(on)) | — | 6 ohm typical at VGS=10 V |
| Configuration | — | Single |
| 工作温度 | — | -55 C to +150 C |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) min/typ/max] |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| MSL 等级 | — | [DATA_NEEDED: MSL level] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Drain Tab Connection | — | SOT-223 tab is drain |