BSS205NH6327XTSA1 vs BSP316PH6327XTSA1 对比
详细并排对比 BSS205NH6327XTSA1 出自 Infineon 和 BSP316PH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSS205NH6327XTSA1 | BSP316PH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.12 | $0.21 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSS205NH6327XTSA1 | — |
| 晶体管类型 | N-Channel MOSFET | — |
| 封装 | PG-SOT23 (SC-59, TO-236-3), 3-pin | PG-SOT223-4 (TO-261-4) |
| 安装类型 | Surface Mount | Surface Mount |
| Drain-Source Voltage V<sub>DS</sub> | 20 V | — |
| Continuous Drain Current I<sub>D</sub> (Ta) | 2.5 A | — |
| Power Dissipation P<sub>D</sub> (Ta) | 500 mW | — |
| R<sub>DS(on)</sub> max (V<sub>GS</sub>=4.5 V) | 85 mΩ | — |
| Gate Threshold V<sub>GS(th)</sub> | [DATA_NEEDED: Vgs(th) typical value] | — |
| 工作温度范围 | -55 °C to +150 °C (junction) | -55 C to +150 C (junction) |
| Gate Drive Voltage | Logic-level compatible | — |
| Qualification | AEC-Q101 | — |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020) | — |
| Packaging | Tape & Reel (H6327) | Tape & Reel (H6327 suffix) |
| FET Type | — | P-Channel |
| Drain-to-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at TA=25C | — | -680 mA |
| Total Power Dissipation (Ptot) at TA=25C | — | 1.8 W |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| 引脚数 | — | 3 + thermal tab |
| Channel Mode | — | Enhancement |
| Technology | — | SIPMOS (P-channel MOSFET) |
| RoHS 状态 | — | Compliant |
| MSL 等级 | — | 1 |