BSS205NH6327XTSA1 vs BSP88H6327XTSA1 对比

详细并排对比 BSS205NH6327XTSA1 出自 Infineon 和 BSP88H6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSS205NH6327XTSA1 BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 ✓ 量产中
Infineon
BSP88H6327XTSA1 BSP88H6327XTSA1 - 240V N-Ch MOSFET 350mA SOT-223 | Infineon

BSP88H6327XTSA1 - 240V N-Ch MOSFET 350mA SOT-223 | Infineon

BSP88H6327XTSA1 ✓ 量产中

规格对比

参数 BSS205NH6327XTSA1 BSP88H6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.12 $0.21
Manufacturer Infineon Technologies —
Part Number BSS205NH6327XTSA1 —
晶体管类型 N-Channel MOSFET N-Channel MOSFET
封装 PG-SOT23 (SC-59, TO-236-3), 3-pin PG-SOT223-4 (SOT-223-3)
安装类型 Surface Mount Surface Mount
Drain-Source Voltage V<sub>DS</sub> 20 V —
Continuous Drain Current I<sub>D</sub> (Ta) 2.5 A —
Power Dissipation P<sub>D</sub> (Ta) 500 mW —
R<sub>DS(on)</sub> max (V<sub>GS</sub>=4.5 V) 85 mΩ —
Gate Threshold V<sub>GS(th)</sub> [DATA_NEEDED: Vgs(th) typical value] —
工作温度范围 -55 °C to +150 °C (junction) —
Gate Drive Voltage Logic-level compatible —
Qualification AEC-Q101 —
Lead Plating Pb-free Pb-free
RoHS Compliance Compliant Compliant
MSL (Moisture Sensitivity Level) MSL1 (per JEDEC J-STD-020) —
Packaging Tape & Reel (H6327) —
Drain-Source Voltage (VDS) — 240 V
Continuous Drain Current (ID) — 350 mA at Ta=25 C
Power Dissipation (PD) — 1.8 W at Ta=25 C
On-State Resistance (RDS(on)) — 6 ohm typical at VGS=10 V
Configuration — Single
工作温度 — -55 C to +150 C
Technology — SIPMOS (planar enhancement mode)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) min/typ/max]
Automotive Qualification — AEC-Q101 qualified
MSL 等级 — [DATA_NEEDED: MSL level]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Drain Tab Connection — SOT-223 tab is drain

数据手册与资源

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