BSS214NH6327XTSA1 vs BSS119NH6327XTSA1 对比

详细并排对比 BSS214NH6327XTSA1 出自 Infineon 和 BSS119NH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSS214NH6327XTSA1 BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 ✓ 量产中
Infineon
BSS119NH6327XTSA1 BSS119NH6327XTSA1 - 100V N-Ch MOSFET, 190mA, SOT-23 | Infineon

BSS119NH6327XTSA1 - 100V N-Ch MOSFET, 190mA, SOT-23 | Infineon

BSS119NH6327XTSA1 ✓ 量产中

规格对比

参数 BSS214NH6327XTSA1 BSS119NH6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.09 $0.12
FET Type N-Channel —
Drain-Source Voltage (VDS) 20 V —
Continuous Drain Current (ID) 1.5 A (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
Drain-Source On-Resistance (RDS(on) max) 250 mOhm at VGS = 4.5 V —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max values] —
Gate-Source Voltage (VGS max) ±12 V (recommended) —
Technology OptiMOS 2 (planar N-channel) —
封装 SOT-23 (PG-SOT23), 3 pins PG-SOT23 (SOT-23-3)
安装类型 Surface Mount Surface Mount
工作温度范围 -55C to +150C (junction) -55°C to +150°C (TJ) [DATA_NEEDED: TA range from datasheet]
Qualification AEC-Q101 (Automotive) AEC-Q101 (automotive grade)
Lead Finish Pb-free lead plating (matte tin) —
RoHS 状态 Compliant Compliant
MSL 等级 1 (per JEDEC J-STD-020) 1 [DATA_NEEDED: confirm from datasheet]
ESD Protection Yes (gate ESD diode) —
晶体管类型 — N-Channel MOSFET
FET Technology — Enhancement-mode, planar N-channel
Drain-Source Voltage (VDS) max — 100 V
Continuous Drain Current (ID) at TA=25°C — 190 mA
Power Dissipation (PD) at TA=25°C — 500 mW
Drain-Source On-Resistance (RDS(on)) max — 6 Ω (typical) [DATA_NEEDED: exact VGS condition and max value]
Gate Threshold Voltage (VGS(th)) — 0.8 V to 1.8 V (typical) [DATA_NEEDED: exact min/typ/max]
Gate Drive Voltage (VGS) — ±20 V max
Lead-Free — Yes
Packaging — Tape & Reel (3,000 pcs/reel)

数据手册与资源

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