BSS214NH6327XTSA1 vs BSS308PEH6327XTSA1 对比

详细并排对比 BSS214NH6327XTSA1 出自 Infineon 和 BSS308PEH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSS214NH6327XTSA1 BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 ✓ 量产中

规格对比

参数 BSS214NH6327XTSA1 BSS308PEH6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.09 $0.11
FET Type N-Channel —
Drain-Source Voltage (VDS) 20 V -30 V
Continuous Drain Current (ID) 1.5 A (Ta) -2 A (Ta)
Power Dissipation (PD) 500 mW (Ta) 500 mW (Ta)
Drain-Source On-Resistance (RDS(on) max) 250 mOhm at VGS = 4.5 V —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max values] —
Gate-Source Voltage (VGS max) ±12 V (recommended) —
Technology OptiMOS 2 (planar N-channel) —
封装 SOT-23 (PG-SOT23), 3 pins —
安装类型 Surface Mount Surface Mount
工作温度范围 -55C to +150C (junction) -55 °C to +150 °C
Qualification AEC-Q101 (Automotive) AEC-Q101 Automotive
Lead Finish Pb-free lead plating (matte tin) —
RoHS 状态 Compliant Compliant
MSL 等级 1 (per JEDEC J-STD-020) —
ESD Protection Yes (gate ESD diode) —
Manufacturer — Infineon Technologies
Part Family — OptiMOS P (small signal / small power MOSFET)
晶体管类型 — P-Channel Enhancement Mode MOSFET
RDS(on) Max — 80 mΩ at VGS = -10 V
Gate-Source Voltage (VGS) Max — +/-20 V
封装 / 外壳 — PG-SOT23 (SOT-23-3)
引脚数 — 3
Packaging — Tape & Reel (T/R)
Standard Reel Quantity — 3000 pcs
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]

数据手册与资源

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