BSS316NH6327XTSA1 vs BTS3028SDLATMA1 对比
详细并排对比 BSS316NH6327XTSA1 出自 Infineon 和 BTS3028SDLATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSS316NH6327XTSA1 | BTS3028SDLATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.13 | $1.05 |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS 2 (Trench) | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 1.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Drain-Source On-Resistance RDS(on) max | 160 mOhm at VGS=10V, ID=1.4A | — |
| Gate-Source Threshold Voltage VGS(th) typ | 2 V at ID=3.7 uA | — |
| Total Gate Charge (Qg) | 600 pC at VGS=5 V | — |
| Input Capacitance (Ciss) | 94 pF at VDS=15 V | — |
| Output Capacitance (Coss) | [DATA_NEEDED: output capacitance] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: reverse transfer capacitance] | — |
| Maximum Power Dissipation (PD) at TA=25C | 500 mW | — |
| 工作结温范围 | -55 C to +150 C | — |
| 封装 | PG-SOT23 (SOT-23-3) | PG-TO252-3-11 (DPAK, 3-pin + tab) |
| 安装类型 | Surface Mount | Surface Mount |
| Lead Plating | Pb-free (Matte Tin) | — |
| MSL 等级 | MSL1 (per JEDEC J-STD-020) | — |
| RoHS 状态 | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q100 qualified |
| Product Type | — | Smart Low-Side Power Switch |
| 拓扑 | — | 1:1 N-Channel, Single Channel |
| Load Supply Voltage Range | — | 2 V to 10 V |
| Continuous Drain Current (I_D) | — | 5 A |
| On-State Resistance (R_DS(on)) | — | 28 mΩ (typ at 25 °C, V_IN = 5 V) |
| Overvoltage Clamp | — | Yes (integrated) |
| Overtemperature Shutdown | — | Yes (integrated) |
| Current Limitation | — | Yes (integrated) |
| ESD Protection | — | Yes (integrated) |
| STATUS Feedback Pin | — | Yes |
| 工作温度范围 | — | -40 °C to +150 °C (T_j) |