BSS84-7-F-W vs BSS84-7-F 对比

详细并排对比 BSS84-7-F-W 出自 Diodes Incorporated 和 BSS84-7-F 出自 Diodes Incorporated。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Diodes Incorporated
BSS84-7-F-W BSS84-7-F-W - P-Ch 50V 130mA SOT-23 MOSFET | Diodes Inc

BSS84-7-F-W - P-Ch 50V 130mA SOT-23 MOSFET | Diodes Inc

BSS84-7-F-W ✓ 量产中
Diodes Incorporated
BSS84-7-F BSS84-7-F - P-Channel 50V 130mA SOT-23 MOSFET | Diodes Inc

BSS84-7-F - P-Channel 50V 130mA SOT-23 MOSFET | Diodes Inc

BSS84-7-F ✓ 量产中

规格对比

参数 BSS84-7-F-W BSS84-7-F
品牌 Diodes Incorporated Diodes Incorporated
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.03 $0.02
Transistor Polarity P-Channel P-Channel
Channel Type Enhancement Mode —
Drain-Source Voltage (Vdss) 50 V —
Continuous Drain Current (Id) 130 mA (Ta) —
Power Dissipation (Pd) 300 mW (Ta) —
On-State Resistance RDS(on) 10 Ohm (max, per Future Electronics listing) [DATA_NEEDED: On-State Resistance RDS(on)]
Gate-Source Voltage (Vgs) [DATA_NEEDED: Vgs max rating] —
Gate Threshold Voltage (Vgs th) [DATA_NEEDED: Vgs threshold] —
Number of Channels 1 —
封装 SOT-23-3 SOT-23-3
安装类型 Surface Mount Surface Mount
Terminal Finish Matte Tin plated, solderable per MIL-STD-202 Matte tin plated (solderable per MIL-STD-202)
工作温度 [DATA_NEEDED: operating temperature range] —
Packaging Tape & Reel (3K per reel, -W suffix) —
RoHS 状态 Compliant Compliant
Technology Si (silicon DMOS) Si
Mode of Operation — Enhancement Mode
Drain-Source Voltage VDS — 50 V
Continuous Drain Current ID — 130 mA (Ta)
Power Dissipation PD — 300 mW (Ta)
Gate-Source Voltage VGS — [DATA_NEEDED: Gate-Source Voltage VGS]
Gate-Source Threshold Voltage VGS(th) — [DATA_NEEDED: Gate-Source Threshold Voltage]
Total Gate Charge Qg — [DATA_NEEDED: Total Gate Charge]
Input Capacitance Ciss — [DATA_NEEDED: Input Capacitance Ciss]
Configuration — Single FET
Packaging Suffix — -7-F (Tape and Reel)

数据手册与资源

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