BSS84PH6327XTSA2 vs BSS84-7-F-W 对比

详细并排对比 BSS84PH6327XTSA2 出自 Infineon 和 BSS84-7-F-W 出自 Diodes Incorporated。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSS84PH6327XTSA2 BSS84PH6327XTSA2 - -60V P-Ch MOSFET 170mA SOT-23 | Infineon

BSS84PH6327XTSA2 - -60V P-Ch MOSFET 170mA SOT-23 | Infineon

BSS84PH6327XTSA2 ✓ 量产中
Diodes Incorporated
BSS84-7-F-W BSS84-7-F-W - P-Ch 50V 130mA SOT-23 MOSFET | Diodes Inc

BSS84-7-F-W - P-Ch 50V 130mA SOT-23 MOSFET | Diodes Inc

BSS84-7-F-W ✓ 量产中

规格对比

参数 BSS84PH6327XTSA2 BSS84-7-F-W
品牌 Infineon Diodes Incorporated
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.10 $0.03
Manufacturer Infineon Technologies —
Part Number BSS84PH6327XTSA2 —
FET Type P-Channel —
Drain-to-Source Voltage (VDS) -60 V —
Continuous Drain Current (ID) -170 mA (Ta) —
Power Dissipation (PD) 360 mW (Ta) —
On-State Resistance (RDS(on)) max 8 ohm at VGS = -10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max values] —
Gate-to-Source Voltage (VGS) +/-20 V —
封装 PG-SOT23 (SOT-23-3) SOT-23-3
安装类型 Surface Mount Surface Mount
工作温度 -55C to +150C [DATA_NEEDED: operating temperature range]
Qualification AEC-Q101 (Automotive) —
Technology Family SIPMOS OptiMOS —
Polarity P-Channel Enhancement Mode —
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Transistor Polarity — P-Channel
Channel Type — Enhancement Mode
Drain-Source Voltage (Vdss) — 50 V
Continuous Drain Current (Id) — 130 mA (Ta)
Power Dissipation (Pd) — 300 mW (Ta)
On-State Resistance RDS(on) — 10 Ohm (max, per Future Electronics listing)
Gate-Source Voltage (Vgs) — [DATA_NEEDED: Vgs max rating]
Gate Threshold Voltage (Vgs th) — [DATA_NEEDED: Vgs threshold]
Number of Channels — 1
Terminal Finish — Matte Tin plated, solderable per MIL-STD-202
Packaging — Tape & Reel (3K per reel, -W suffix)
Technology — Si (silicon DMOS)

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