BSZ068N06NSATMA1 vs IQDH35N03LM5SCATMA1 对比
详细并排对比 BSZ068N06NSATMA1 出自 Infineon 和 IQDH35N03LM5SCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSZ068N06NSATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.62 | $2.05 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench-gate) | OptiMOS 5 (trench, shielded-gate) |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc) | 40 A | — |
| Continuous Drain Current (ID, Ta) | [DATA_NEEDED: ID at Ta] | — |
| On-Resistance RDS(on) max | 6.8 mΩ @ VGS=10 V | — |
| Power Dissipation (Ta) | 2.1 W | — |
| Power Dissipation (Tc) | 46 W | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typ] | — |
| 工作温度范围 | -55 °C to +150 °C | -55 C to +175 C |
| 封装 | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | MSL1 | 1 (unlimited) |
| RoHS / Halogen-Free | RoHS compliant, halogen-free | — |
| Manufacturer | — | Infineon Technologies |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at Ta | — | 66 A |
| Pulsed Drain Current (IDM) at Tc | — | 700 A |
| On-State Resistance (RDS(on)) max | — | 0.35 mOhm @ VGS=10V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 278 W |
| RoHS 状态 | — | Compliant |
| Marking | — | IQDH35N03LM5S |