BSZ0901NSIATMA1 vs BSZ0501NSIATMA1 对比

详细并排对比 BSZ0901NSIATMA1 出自 Infineon 和 BSZ0501NSIATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 BSZ0901NSIATMA1 BSZ0501NSIATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.34 $0.29
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ0901NSIATMA1 BSZ0501NSIATMA1
Series OptiMOS 25V —
Technology OptiMOS trench N-channel MOSFET —
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta=25C 25 A —
Continuous Drain Current (ID) at Tc=25C 40 A —
Power Dissipation (PD) at Ta=25C 2.1 W —
Power Dissipation (PD) at Tc=25C 69 W —
封装 PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) PG-TSDSON-8-FL (3.3 x 3.3 mm)
安装类型 Surface Mount Surface Mount
引脚数量 8 —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
On-Resistance RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) max @ VGS=10V] —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) max @ VGS=4.5V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] [DATA_NEEDED: Qg]
工作温度范围 -55 C to +150 C (typical MOSFET range) [DATA_NEEDED: Tj max]
Packaging Tape & Reel (ATMA1 suffix = 13-inch reel) —
RoHS 状态 Compliant Compliant
Product Family — OptiMOS 5 (25V/30V)
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Id) at TA=25C — 25 A
Continuous Drain Current (Id) at TC=25C — 40 A
Power Dissipation (Pd) at TA=25C — 2.1 W
Power Dissipation (Pd) at TC=25C — 50 W
Operating Mode — Enhancement Mode
Configuration — Single with built-in diode
Number of Terminals — 8
JESD-609 Code — e3 (matte tin)
MSL 等级 — [DATA_NEEDED: MSL rating]
Rds(on) at Vgs=10V (typ) — [DATA_NEEDED: Rds(on) value]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th)]

数据手册与资源

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