BSZ096N10LS5ATMA1 vs ISC080N10NM6ATMA1 对比

详细并排对比 BSZ096N10LS5ATMA1 出自 Infineon 和 ISC080N10NM6ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
ISC080N10NM6ATMA1 ISC080N10NM6ATMA1 - 100V OptiMOS 6 N-Channel MOSFET | Infineon

ISC080N10NM6ATMA1 - 100V OptiMOS 6 N-Channel MOSFET | Infineon

ISC080N10NM6ATMA1 ✓ 量产中

规格对比

参数 BSZ096N10LS5ATMA1 ISC080N10NM6ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.94 $1.05
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 OptiMOS™ 6 100V
Polarity N-Channel —
Drain-Source Voltage (VDS max) 100 V —
Gate-Source Voltage (VGS max) 20 V (typical) —
Continuous Drain Current (ID, TC=25 °C) 40 A —
Maximum Silicon Drain Current (ID max) 62 A —
Pulse Drain Current (ID,pulse) 160 A —
On-Resistance RDS(on) max 9.6 mΩ at VGS=10 V —
Total Power Dissipation (Ptot, TC=25 °C) 69 W —
Gate Threshold Voltage VGS(th) Logic-level (low single-volt range) —
Diode Continuous Forward Current (IS) 40 A (TC=25 °C) —
Diode Forward Voltage (VSD) 0.85 V typ, 1.2 V max at IF=20 A —
封装 PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) PG-TDSON-8 FL (TDSON EP)
安装类型 Surface Mount Surface Mount
工作温度范围 -55 °C to +150 °C (junction) -55°C to +175°C (TJ max, per datasheet)
Technology OptiMOS 5 trench MOSFET —
Gate Drive Logic-level compatible —
ESD Protection Yes (gate-integrated) —
RoHS 状态 Compliant Compliant
Packaging Code ATMA1 (tape and reel) —
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 100 V
Continuous Drain Current (ID) at Ta — 13 A
Continuous Drain Current (ID) at Tc — 75 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 100 W
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A — 8.05 mΩ
Gate Threshold Voltage (VGS(th)) — 3.3 V at 36 µA
MSL 等级 — 1 (per JEDEC J-STD-020, per datasheet)
Lead-Free — Yes
无卤 — Yes
Qualification — Industrial grade (per Infineon OptiMOS 6 100V family)

数据手册与资源

浏览全部产品 创建 BOM 获取报价