BSZ130N03LSGATMA1 vs BSC050N03LSGATMA1 对比
详细并排对比 BSZ130N03LSGATMA1 出自 Infineon 和 BSC050N03LSGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSZ130N03LSGATMA1 | BSC050N03LSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.41 | $0.36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 25V / 30V | — |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (Ta=25 C) | 10 A | — |
| 连续漏极电流（TC=25°C） | 35 A | — |
| On-State Resistance Rds(on) max @ Vgs=10V | 13 mOhm | — |
| Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA | 2.2 V | — |
| Power Dissipation (Ta) | 2.1 W | — |
| Power Dissipation (Tc) | 25 W | — |
| 封装 | PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 C to +150 C (junction) | -55 C to +150 C |
| MSL 等级 | 1 (per JEDEC J-STD-020) | 1 |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| Qualification | Industrial / Commercial (non-automotive) | — |
| Part Number | — | BSC050N03LSGATMA1 |
| Technology | — | OptiMOS 3 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 80 A |
| Continuous Drain Current (ID) at Ta | — | 18 A |
| On-State Resistance (RDS(on)) Max at VGS=10V | — | 5 mOhm |
| Power Dissipation (PD) at Tc | — | 50 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Channel Type | — | N-Channel |