BSZ130N03LSGATMA1 vs BSZ096N10LS5ATMA1 对比

详细并排对比 BSZ130N03LSGATMA1 出自 Infineon 和 BSZ096N10LS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 BSZ130N03LSGATMA1 BSZ096N10LS5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.41 $0.94
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 25V / 30V —
Polarity / Channel Type N-Channel Enhancement Mode —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (Ta=25 C) 10 A —
连续漏极电流(TC=25°C) 35 A —
On-State Resistance Rds(on) max @ Vgs=10V 13 mOhm —
Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA 2.2 V —
Power Dissipation (Ta) 2.1 W —
Power Dissipation (Tc) 25 W —
封装 PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm)
安装类型 Surface Mount Surface Mount
工作温度范围 -55 C to +150 C (junction) -55 °C to +150 °C (junction)
MSL 等级 1 (per JEDEC J-STD-020) —
RoHS 状态 Compliant Compliant
Lead-Free Yes —
无卤 Yes —
Qualification Industrial / Commercial (non-automotive) —
Product Family — OptiMOS 5
Polarity — N-Channel
Drain-Source Voltage (VDS max) — 100 V
Gate-Source Voltage (VGS max) — 20 V (typical)
Continuous Drain Current (ID, TC=25 °C) — 40 A
Maximum Silicon Drain Current (ID max) — 62 A
Pulse Drain Current (ID,pulse) — 160 A
On-Resistance RDS(on) max — 9.6 mΩ at VGS=10 V
Total Power Dissipation (Ptot, TC=25 °C) — 69 W
Gate Threshold Voltage VGS(th) — Logic-level (low single-volt range)
Diode Continuous Forward Current (IS) — 40 A (TC=25 °C)
Diode Forward Voltage (VSD) — 0.85 V typ, 1.2 V max at IF=20 A
Technology — OptiMOS 5 trench MOSFET
Gate Drive — Logic-level compatible
ESD Protection — Yes (gate-integrated)
Packaging Code — ATMA1 (tape and reel)

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