BTS51202EKAXUMA1 vs BTH60702EPVXUMA1 对比

详细并排对比 BTS51202EKAXUMA1 出自 Infineon 和 BTH60702EPVXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BTH60702EPVXUMA1 BTH60702EPVXUMA1 - 60 mΩ Dual High-Side Switch 1.7A | Infineon

BTH60702EPVXUMA1 - 60 mΩ Dual High-Side Switch 1.7A | Infineon

BTH60702EPVXUMA1 ✓ 量产中

规格对比

参数 BTS51202EKAXUMA1 BTH60702EPVXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.68 $1.21
拓扑 Dual High-Side Switch (2 channels) —
Technology Smart6 (N-channel vertical MOSFET with charge pump) —
Number of Channels 2 2
On-State Resistance (RDS(on)) 120 mΩ (typical per channel) —
Continuous Output Current 2 A per channel (typical 2.5 A) —
Operating Voltage (Vbb) 8 V to 18 V —
Load Type Lamps up to 1×10 W, LEDs, resistive/inductive loads —
封装 PG-DSO-14-40-EP (14-pin SOIC with exposed pad) PG-TSDSO-14 with exposed pad
安装类型 Surface Mount Surface Mount
工作温度 -40 °C to +150 °C —
Maximum Power Dissipation 1800 mW —
Integrated Protection Over-current, Short-circuit, Over-temperature, Over-voltage, Under-voltage lockout, Reverse battery —
Diagnostic Output Yes (status feedback pin) —
Charge Pump Integrated —
Automotive Qualified Yes —
RoHS 状态 Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — PROFET + 48V
功能 — Smart high-side power switch (dual channel, 2 x 1:1)
On-State Resistance (typ.) — 60 mΩ per channel
Continuous Load Current (per channel) — 1.7 A
Configuration — 2 x 1:1 (dual independent high-side)
晶体管类型 — N-channel vertical power MOSFET with charge pump
Nominal Operating Voltage — 48 V board net
Maximum Supply Voltage — 54 V
Load Voltage Range — [DATA_NEEDED: load voltage range]
Current Sense / Diagnosis — Yes (analog current-sense output)
Protection Features — Over-load, short-circuit, over-voltage, reverse battery, thermal shutdown
Operating Temperature (junction) — -40 °C to +150 °C (automotive grade)
MSL 等级 — [DATA_NEEDED: MSL level]

数据手册与资源

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