BTS621L1E3128ABUMA1 vs MC33289DWR2 对比

详细并排对比 BTS621L1E3128ABUMA1 出自 Infineon 和 MC33289DWR2 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MC33289DWR2 MC33289DWR2 - Dual High-Side Switch 40mOhm 27V | NXP SOIC-20

MC33289DWR2 - Dual High-Side Switch 40mOhm 27V | NXP SOIC-20

MC33289DWR2 ✓ 量产中

规格对比

参数 BTS621L1E3128ABUMA1 MC33289DWR2
品牌 Infineon NXP Semiconductors
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.45 $1.62
Product Type Dual-channel smart high-side power switch (PROFET) Dual High-Side Switch (DHSS)
Number of Channels 2 (dual high-side, 1:1) —
FET Topology N-Channel vertical power MOSFET with charge pump —
On-State Resistance Rds(on) 8 mΩ typical per channel —
Nominal Operating Voltage 12 V (automotive bus) —
Maximum Supply Voltage 24 V (load-dump survivable) —
Continuous Load Current 4.4 A per channel —
工作温度范围 -40 °C to +150 °C junction —
封装 PG-TO263-7-2 (D2PAK-7, exposed tab) 20-SOIC (0.295 inch, 7.50 mm width)
安装类型 Surface Mount Surface Mount
Input Logic Compatibility CMOS-compatible, ground-referenced —
Diagnostic Feedback Yes - open-load and overtemperature reporting —
Embedded Protection Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery —
Technology Smart SIPMOS (monolithic) —
RoHS / Lead-Free Compliant (Pb-free) —
拓扑 — 2 x High-Side N-MOSFET switches
On-State Resistance (RDSon) — 40 mOhm (per channel)
Supply Voltage Range (VCC) — 6 V to 27 V
Maximum Transient Voltage — 40 V (load dump tolerant)
Output Current per Channel — [DATA_NEEDED: continuous current rating per channel]
输出数量 — 2
Input Compatibility — TTL/CMOS compatible logic inputs
Fault Protection — Current limit, thermal shutdown, open-load detect
Status Feedback — Yes (fault flag output)
工作温度 — -40C to +125C (automotive grade)
MSL 等级 — [DATA_NEEDED: MSL rating]
RoHS 状态 — [DATA_NEEDED: RoHS status]
Automotive Grade — Yes (AEC-Q100 qualified)
Charge Pump — Integrated (gate drive)

数据手册与资源

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