DS1249AB-70IND vs DS1249AB-70IND+ 对比
详细并排对比 DS1249AB-70IND 出自 Analog Devices 和 DS1249AB-70IND+ 出自 Analog Devices。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | DS1249AB-70IND | DS1249AB-70IND+ |
|---|---|---|
| 品牌 | Analog Devices | Analog Devices |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $49.85 | $65.80 |
| 存储器类型 | NVSRAM (Non-Volatile SRAM) | NVSRAM (Non-Volatile SRAM) |
| 存储容量 | 2 Mbit (262,144 x 8) | 2 Mbit (2,097,152 bits) |
| 存储组织 | 262,144 words x 8 bits | 256K x 8 |
| Access Time | 70 ns | 70 ns (max) |
| 接口 | Parallel | Parallel |
| Write Cycle Endurance | Unlimited writes | — |
| Data Retention | 10 years minimum (no external power) | 10 years (typical, with internal lithium cell) |
| Backup Mechanism | Internal lithium energy cell + VCC monitor | — |
| Write Protection | Automatic on VCC out-of-tolerance | Automatic on VCC out-of-tolerance |
| Operating Voltage (VCC) | 5 V (typical NVSRAM range) | — |
| 工作温度 | -40C to +85C (industrial, -IND suffix) | — |
| 封装 | 32-EDIP (Extended DIP module, 0.600 inch / 15.24 mm) | — |
| 安装类型 | Through-Hole (DIP module) | Through-Hole (DIP module with socket) |
| RoHS 状态 | Contains lithium - subject to special handling rules | Compliant (per Maxim Integrated product page) |
| Technology | Low-power CMOS | — |
| Write Cycle Time | — | 70 ns (word write, no write delay) |
| Supply Voltage (VCC) | — | 5 V ±10% (typical 4.5 V to 5.5 V) |
| 工作温度范围 | — | -40 °C to +85 °C (industrial, -IND suffix) |
| 封装 / 外壳 | — | 32-EDIP (Extended DIP, 0.600 in / 15.24 mm) |
| 引脚数量 | — | 32 |
| Built-in Battery | — | Yes (internal lithium energy source) |
| Endurance | — | Unlimited SRAM read/write cycles |
| Shipping Regulation | — | UN3481 PI970 (lithium battery - air/sea per IATA) |
| Lead-Free / Halogen-Free | — | Lead-free (RoHS compliant) |