EDB2432B4MA-1DAUT-F-R vs EDB2432B4MA-1DAUT-F-D 对比

详细并排对比 EDB2432B4MA-1DAUT-F-R 出自 Micron Technology 和 EDB2432B4MA-1DAUT-F-D 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
EDB2432B4MA-1DAUT-F-R EDB2432B4MA-1DAUT-F-R - 2Gbit LPDDR2 DRAM 533MHz | Micron

EDB2432B4MA-1DAUT-F-R - 2Gbit LPDDR2 DRAM 533MHz | Micron

EDB2432B4MA-1DAUT-F-R ✓ 量产中
Micron Technology
EDB2432B4MA-1DAUT-F-D EDB2432B4MA-1DAUT-F-D - 2Gbit LPDDR2 SDRAM 533MHz | Micron

EDB2432B4MA-1DAUT-F-D - 2Gbit LPDDR2 SDRAM 533MHz | Micron

EDB2432B4MA-1DAUT-F-D ✓ 量产中

规格对比

参数 EDB2432B4MA-1DAUT-F-R EDB2432B4MA-1DAUT-F-D
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $13.65 $7.43
存储器类型 LPDDR2 SDRAM (DRAM, mobile LPDDR2) Volatile Memory - DRAM
存储容量 2 Gbit 2 Gbit (64M x 32)
存储组织 64M x 32 64M x 32
接口 Parallel Parallel
Clock Frequency 533 MHz 533 MHz
Supply Voltage (Min) 1.14 V —
Supply Voltage (Max) 1.3 V —
封装 / 外壳 134-VFBGA (10 x 11.5 mm) —
Die Package Configuration DDP (Double Die Package) —
工作温度 -40C to +125C -40C to +125C (Automotive)
Grade Automotive (AUT) —
安装类型 Surface Mount Surface Mount
Terminal Count 134 —
Memory Circuits 1 —
Packaging Tape & Reel (TR suffix) —
RoHS 状态 [DATA_NEEDED: RoHS status] —
MSL 等级 [DATA_NEEDED: moisture sensitivity level] —
Technology — SDRAM - Mobile LPDDR2
封装 — 134-VFBGA (10 x 11.5 mm)
Package Construction — DDP (Double-Die Package)
Marking Code — D9WVG
Part Status — Active
Lead-Free Status — Lead free (-F suffix)
Halogen-Free Status — Halogen free (-F suffix)
电源电压 — [DATA_NEEDED: VDD/VDDQ supply voltage]
Write Cycle Time - Word, Page — [DATA_NEEDED: write cycle time]

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