EPF6010ATC100-3N vs EPF6010ANTC100-2 对比
详细并排对比 EPF6010ATC100-3N 出自 Intel 和 EPF6010ANTC100-2 出自 Intel。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Intel
EPF6010ANTC100-2 - FLEX 6000 FPGA, 880 LEs, 71 I/O, 100-TQFP | Intel
EPF6010ANTC100-2 ⚠ 最后一次采购规格对比
| 参数 | EPF6010ATC100-3N | EPF6010ANTC100-2 |
|---|---|---|
| 品牌 | Intel | Intel |
| 分类 | FPGA & CPLD | FPGA & CPLD |
| 生命周期状态 | 最后采购期 | 最后采购期 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $9.95 | $17.50 |
| Family | FLEX 6000 | FLEX 6000 / FLEX 6000A |
| Logic Elements / Cells | 880 | — |
| Equivalent Gate Count | 10,000 gates | — |
| Logic Array Blocks (LABs) | 88 | — |
| User I/Os | 71 | — |
| Supply Voltage (Operating) | 3.0 V to 3.6 V | — |
| Maximum Internal Frequency | 142.86 MHz | — |
| Process Technology | 0.42 µm CMOS | — |
| Speed Grade | -3 | -2 |
| 封装 | 100-pin TQFP (14 x 14 x 1.4 mm) | 100-pin TQFP (14x14 mm, 0.5 mm pitch) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | 0 °C to +70 °C (commercial) | Commercial (0C to +70C) |
| Programming Method | In-system SRAM via ByteBlaster/BitBlaster | — |
| MSL 等级 | 3 (168 hours) | 3 (168 hours) |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS compliance] |
| Logic Elements | — | 880 |
| Programmable I/O Pins | — | 71 |
| Configuration Method | — | SRAM (volatile), in-system programmable |
| Programming Interface | — | IEEE 1149.1 (JTAG) / passive serial / EPC configuration device |
| Supply Voltage (VCCINT) | — | 5.0 V (FLEX 6000A); 3.3 V (FLEX 6000) |
| I/O Standards Supported | — | TTL, CMOS, PCI (with clamping diodes) |
| Number of LABs | — | [DATA_NEEDED: LAB count] |
| Embedded Memory | — | [DATA_NEEDED: embedded RAM blocks] |
| Global Clock Networks | — | [DATA_NEEDED: global clock count] |
| Packaging | — | Tray (per Altera packing standard) |