H5AN8G4NAFR-PBC vs H5AN8G4NAFR-VKC 对比

详细并排对比 H5AN8G4NAFR-PBC 出自 SK hynix 和 H5AN8G4NAFR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G4NAFR-PBC H5AN8G4NAFR-PBC - 8Gb DDR4 SDRAM 1.2V | SK hynix

H5AN8G4NAFR-PBC - 8Gb DDR4 SDRAM 1.2V | SK hynix

H5AN8G4NAFR-PBC ✓ 量产中
SK hynix
H5AN8G4NAFR-VKC H5AN8G4NAFR-VKC - 8Gb DDR4-2666 SDRAM 2Gx4 | SK hynix

H5AN8G4NAFR-VKC - 8Gb DDR4-2666 SDRAM 2Gx4 | SK hynix

H5AN8G4NAFR-VKC ✓ 量产中

规格对比

参数 H5AN8G4NAFR-PBC H5AN8G4NAFR-VKC
品牌 SK hynix SK hynix
分类 DRAM Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.55 $2.98
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gb
存储组织 2Gb x 4 2G x 4
Interface Voltage (VDD/VDDQ) 1.2 V +/- 0.06 V —
Wordline Pump Voltage (VPP) 2.5 V (+0.25/-0.125 V) —
Speed Bins (per datasheet) DDR4-1600 / 1866 / 2133 / 2400 (DLL ON) —
Bank Groups 4 (BG0-BG1) —
Banks 16 (4 bank groups x 4 banks) —
Row Address A0-A16 (17 bits) —
封装 78-ball FBGA 78-ball FBGA (PBGA78)
安装类型 Surface Mount Surface Mount
Technology CMOS CMOS
Lead-Free / Halogen-Free Yes (RoHS Compliant per datasheet) —
RoHS 状态 Compliant Compliant (Lead-Free & Halogen-Free)
工作温度范围 [DATA_NEEDED: operating temperature range] —
CAS 延迟 [DATA_NEEDED: CL for PBC speed bin] —
Geardown Mode Note DDR4-1600/1866/2133/2400 bins valid only when Geardown Mode is disabled —
数据速率 — 2666 Mbps per pin (DDR4-2666)
CAS Latency (CL) — 19 (CL19, speed bin VK)
Supply Voltage (VDD) — 1.2 V
I/O Voltage (VDDQ) — 1.2 V
Family — H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC
Application — Main memory requiring large density and high bandwidth
Datasheet Revision — Rev. 1.2 (Jul. 2017)
工作温度 — [DATA_NEEDED: Operating Temperature]
Refresh — [DATA_NEEDED: Refresh specification]

数据手册与资源

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