H5AN8G4NAFR-PBC vs H5AN8G8NAFR-PBC 对比

详细并排对比 H5AN8G4NAFR-PBC 出自 SK hynix 和 H5AN8G8NAFR-PBC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G4NAFR-PBC H5AN8G4NAFR-PBC - 8Gb DDR4 SDRAM 1.2V | SK hynix

H5AN8G4NAFR-PBC - 8Gb DDR4 SDRAM 1.2V | SK hynix

H5AN8G4NAFR-PBC ✓ 量产中
SK hynix
H5AN8G8NAFR-PBC H5AN8G8NAFR-PBC - 8Gb DDR4 SDRAM x8 1.2V | SK hynix

H5AN8G8NAFR-PBC - 8Gb DDR4 SDRAM x8 1.2V | SK hynix

H5AN8G8NAFR-PBC ✓ 量产中

规格对比

参数 H5AN8G4NAFR-PBC H5AN8G8NAFR-PBC
品牌 SK hynix SK hynix
分类 DRAM DRAM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.55 $2.20
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gb
存储组织 2Gb x 4 1G x 8
Interface Voltage (VDD/VDDQ) 1.2 V +/- 0.06 V —
Wordline Pump Voltage (VPP) 2.5 V (+0.25/-0.125 V) —
Speed Bins (per datasheet) DDR4-1600 / 1866 / 2133 / 2400 (DLL ON) —
Bank Groups 4 (BG0-BG1) —
Banks 16 (4 bank groups x 4 banks) —
Row Address A0-A16 (17 bits) —
封装 78-ball FBGA FBGA-78
安装类型 Surface Mount Surface Mount
Technology CMOS —
Lead-Free / Halogen-Free Yes (RoHS Compliant per datasheet) —
RoHS 状态 Compliant Compliant
工作温度范围 [DATA_NEEDED: operating temperature range] —
CAS 延迟 [DATA_NEEDED: CL for PBC speed bin] —
Geardown Mode Note DDR4-1600/1866/2133/2400 bins valid only when Geardown Mode is disabled —
电源电压 — 1.2 V
Speed Grade / Data Rate — [DATA_NEEDED: speed grade / data rate]
接口 — DDR4 (double data rate, synchronized to clock)
Address Inputs — A0 - A17 (A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15, WE_n/A14 multiplexed)
Connectivity Test Mode — TEN (optional input on x4/x8, required on x16)
Process Technology — CMOS
Lead-Free — Yes
无卤 — Yes
Datasheet Revision — Rev. 1.2 / July 2017
工作温度 — [DATA_NEEDED: operating temperature range]

数据手册与资源

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