H5AN8G6NCJR-PBC vs H5AN8G6NAFR-VKC 对比
详细并排对比 H5AN8G6NCJR-PBC 出自 SK hynix 和 H5AN8G6NAFR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G6NCJR-PBC | H5AN8G6NAFR-VKC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.30 | $6.25 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Memory Organization | 8Gb x16 (512M x 16) | — |
| 存储容量 | 8 Gbit | — |
| 数据速率 | [DATA_NEEDED: exact speed grade of -PBC suffix] | — |
| Family Data Rate Range | Up to 2666 Mbps (family: H5AN8G6NCJR-xxC) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| 封装 | FBGA-96 (96-ball fine-pitch BGA) | FBGA-96 (PBGA96) |
| 安装类型 | Surface Mount | Surface Mount (BGA) |
| 工作温度 | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| 接口 | Parallel, synchronous to both clock edges | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask Function | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Dynamic On-Die Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| Lead-Free / Halogen-Free | Yes (family datasheet: Lead-Free & Halogen-Free, RoHS compliant) | — |
| RoHS 状态 | Compliant | Lead-Free & Halogen-Free, RoHS Compliant |
| Density | — | 8 Gb |
| 存储组织 | — | 512M x 16 |
| Core Supply Voltage | — | 1.2 V |
| Technology | — | CMOS |
| Speed Grade | — | -VKC (DDR4-2666 class, per SK Hynix part numbering) |
| Data Rate Class | — | Up to 2666 MT/s (per -VKC speed code) |
| Family | — | H5AN8G4NAFR / H5AN8G8NAFR / H5AN8G6NAFR |
| Application | — | Main memory (high density, high bandwidth) |
| Refresh | — | [DATA_NEEDED: refresh mode specification] |
| CAS 延迟 | — | [DATA_NEEDED: CAS latency for -VKC bin] |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |