H5AN8G8NCJR-VKI vs H5AN8G8NCJR-UHC 对比

详细并排对比 H5AN8G8NCJR-VKI 出自 SK hynix 和 H5AN8G8NCJR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G8NCJR-VKI H5AN8G8NCJR-VKI - DDR4 8Gb 2666Mbps DRAM | SK hynix

H5AN8G8NCJR-VKI - DDR4 8Gb 2666Mbps DRAM | SK hynix

H5AN8G8NCJR-VKI ✓ 量产中
SK hynix
H5AN8G8NCJR-UHC H5AN8G8NCJR-UHC - 8Gb DDR4-2400 SDRAM FBGA-78 | SK hynix

H5AN8G8NCJR-UHC - 8Gb DDR4-2400 SDRAM FBGA-78 | SK hynix

H5AN8G8NCJR-UHC ✓ 量产中

规格对比

参数 H5AN8G8NCJR-VKI H5AN8G8NCJR-UHC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $4.85 $2.88
存储器类型 DDR4 SDRAM DDR4 SDRAM
存储容量 8 Gb —
Memory Organization 1G x8 —
数据速率 2666 Mbps —
电源电压 1.2 V —
接口 Parallel —
Memory Format DRAM —
Volatile Yes —
封装 FBGA-78 FBGA-78
安装类型 Surface Mount Surface Mount (BGA)
Grade Industrial (I suffix) —
工作温度 [DATA_NEEDED: Operating Temperature] [DATA_NEEDED: operating temperature range]
Technology CMOS —
Product Family H5AN8G8NCJR-xxC/xI DDR4 SDRAM —
Packaging Tray —
Product Status Active —
RoHS 状态 [DATA_NEEDED: RoHS Status] —
Density — 8 Gb
存储组织 — 1G x 8
Speed Grade — DDR4-2400 (PC4-19200)
Supply Voltage (VDD) — 1.2 V
RoHS Code — Yes
REACH Compliance — Yes (per distributor record)
Lead-Free — Yes (family documented as Lead-Free & Halogen-Free)
无卤 — Yes
Part Life Cycle Code — Active
Access Type — Synchronous, both clock edges (DDR)
Memory Configuration — Bank-group architecture DDR4
Die Revision — CJR (C-die family)
Manufacturer — SK hynix Inc.

数据手册与资源

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