H5ANAG4NBJR-RDC vs H5ANAG4NBJR-VKC 对比

详细并排对比 H5ANAG4NBJR-RDC 出自 SK hynix 和 H5ANAG4NBJR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5ANAG4NBJR-RDC H5ANAG4NBJR-RDC - 16Gb DDR4 SDRAM 4Gx4 1.2V | SK hynix

H5ANAG4NBJR-RDC - 16Gb DDR4 SDRAM 4Gx4 1.2V | SK hynix

H5ANAG4NBJR-RDC ✓ 量产中
SK hynix
H5ANAG4NBJR-VKC H5ANAG4NBJR-VKC - 16Gb DDR4 SDRAM FBGA-78 | SK hynix

H5ANAG4NBJR-VKC - 16Gb DDR4 SDRAM FBGA-78 | SK hynix

H5ANAG4NBJR-VKC ✓ 量产中

规格对比

参数 H5ANAG4NBJR-RDC H5ANAG4NBJR-VKC
品牌 SK hynix SK hynix
分类 Memory ICs DRAM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $5.75 $14.40
存储器类型 DDR4 SDRAM —
Density 16 Gb (2 GB) 16 Gb
存储组织 4G x 4 —
Supply Voltage VDD 1.2 V —
数据速率 2666 MT/s (speed bin NBJR, [DATA_NEEDED: exact MT/s confirmation from datasheet]) [DATA_NEEDED: data rate (MT/s) for -VKC bin]
封装 78-ball FBGA FBGA-78 (7.5 mm x 11 mm)
安装类型 Surface Mount Surface Mount (BGA)
Prefetch 16n (bank group architecture) —
接口 SSTL-12 —
特性 Bank groups, CA parity, data CRC, ODT, DLL-off mode —
Refresh Self refresh, 8n refresh [DATA_NEEDED: 1x/2x/4x refresh option] —
Operating Temperature (case) -40C to +85C (industrial; extended to 95C per datasheet conditions) —
Temperature Grade Suffix RDC - industrial temperature, lead-free, halogen-free —
RoHS 状态 Compliant (lead-free / halogen-free per RDC suffix) Compliant (per distributor listing)
VDDQ 1.2 V —
Product Family SK hynix computing 16Gb DDR4 H5ANAG4(8_6)NBJR series —
Product Type — DDR4 SDRAM
工作温度范围 — -40 C to +95 C (case, industrial with auto self-refresh)
Speed Grade — VKC (commercial speed bin - see SK hynix part number decoder)
VDD Supply Voltage — [DATA_NEEDED: VDD supply voltage]
VDDQ Supply Voltage — [DATA_NEEDED: VDDQ supply voltage]
Data Mask Function — Yes
Asynchronous Reset — Yes
Dynamic ODT — Yes
ZQ Calibration — Yes
Write Leveling — Yes
CRC / CA Parity — Yes
Auto Self-Refresh — Yes
Lead-Free — [DATA_NEEDED: lead-free status]
无卤 — [DATA_NEEDED: halogen-free status]

数据手册与资源

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