H5ANAG8NBJR-VKC vs H5ANAG8NCR-PBC 对比
详细并排对比 H5ANAG8NBJR-VKC 出自 SK hynix 和 H5ANAG8NCR-PBC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG8NBJR-VKC | H5ANAG8NCR-PBC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $8.60 | $9.50 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | — |
| 存储组织 | 2G x 8 | x8 |
| Speed Grade | DDR4-2666 (2666 Mbps/pin) | — |
| 电源电压 | 1.14 V to 1.26 V (VDDQ) | 1.2 V (typical, DDR4 class) |
| Clock Frequency | 1.6 GHz (internal interface per distributor data) | [DATA_NEEDED: clock frequency] |
| 工作温度 | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| 封装 | FBGA-78 | FBGA-78 (approximately 7.5 x 11 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Standby Current | 30 mA (operating, per distributor listing) | — |
| Auto Self-Refresh | Yes | — |
| Data Mask Function | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Auto Precharge | Yes | — |
| RoHS 状态 | Compliant, Lead-Free and Halogen-Free | Compliant (Lead-Free & Halogen-Free per SK hynix family datasheet) |
| Refresh Interval | [DATA_NEEDED: tREFI refresh interval] | — |
| Memory Density | — | 16Gb (2 GB) |
| 接口类型 | — | Parallel, DDR4 (Double Data Rate 4) |
| Speed Grade Code | — | -PBC (SK hynix speed/temperature code; exact Mbps bin [DATA_NEEDED: speed bin value]) |
| CAS 延迟 | — | [DATA_NEEDED: CAS latency] |
| Bank Group Architecture | — | Yes (DDR4 bank groups) |
| On-Die Termination (ODT) | — | Yes (DDR4 standard feature) |
| Self-Refresh | — | Yes (DDR4 standard feature) |
| Process Technology | — | CMOS |
| Application Class | — | Main memory (server, industrial, networking, PC) |